128x128 MWIR FPA on the base of epitaxial layer MCT grown by MOCVD
K. O. Boltar, N. I. Yakovleva, S. V. Golovin, V. P. Ponomarenko, V. I. Stafeev, I. D. Bourlakov
State Scientific Center of Russian Federation "RD&P Center Orion", Moscow, Russia
A. N. Moiseev, A. P. Kotkov, V. V. Dorofeev
Chemistry Institute of Rare Materials Russian Academy of Science, N.-Novgorod, Russia
MWIR 128x128 Focal Plane Array (FPA) performance has been investigated. FPA has been fabricated on the base of HgCdTe active layers grown on (111)B GaAs substrate by Metal Organic Chemical Vapor Deposition (MOCVD). Histograms and diagrams of photodiodes current, responsivity and detectivity have been plotted for FPA with cutoff value 5.1 mm at T = 200 K.
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