Electron and gamma irradiation of MBE grown MCT films
A. V. Voitsekhovsky, A. P. Kokhanenko, A. G. Korotaev, D. V. Grigor’ev
Siberian Physiko-Technical Institute, Tomsk, Russia
V. S. Varavin, S. A. Dvoretsky, Yu. G. Sidorov, N. N. Mikhailov
Institute of Semiconductor Physics, Novosibirsk, Russia
In this work the first results on a radiation stability investigation of mercury cadmium telluride (MCT) epitaxial films, grown by molecular beam epitaxy, represented. MBE films of MCT have the high radiation stability (absence of noticeable changes in values of electrophysical and photoelectric parameters) to an irradiation by high energy electrons (Å ~ 1—2 MeV, Ф up to 1016 cm-2) and Co60 gamma rays (Å ~ 1.25 MeV, Ф = 105—107R). The obtained preliminary results allow us to speak about high quality of explored MCT epifilms.
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