Internal gettering processes for new generation photosensitive charge-coupled devices
E. V. Kostyukov, M. A. Pospelova, T. F. Rusak
"Pulsar" Science Research Institute, Moscow, Russia
S. V. Trounov
Joint Stock Company «NIIME and "Mikron"», Moscow, Russia
During developing processes of internal getter forming it has been found out that thin oxide layer (thickness less than 70 Å) have to be formed on the surface of the wafer before the stage of a defect-free zone formation to prevent harmful action of nitrogen at high temperatures. The obtained correlation between precipitate density and falling of interstitial oxygen concentration makes it possible to apply the non-destruction internal getter quality testing method instead of the destruction one. The optimal oxygen concentration in silicon wafers for internal getter for-ming is in the narrow range (7,5÷9)·1017 cm-3.
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