No. 5 | Founded in 1994 | Moscow 2003 |
Results of surface ion processing in production of silicon pin-photodiodes
V. P. Astakhov, I. A. Bolesov, E. F. Karpenko, V. V. Karpov,
P. I. Lapin, K. V. Sorokin, N. V. Filippenko
Joint Stock Company «Moscow Plant "Sapphire"», Moscow, Russia
In this work the n+-p-junctions periphery treatment influence of nitrogen molecular ions implantant on 8-quadrant pin-photodiodes with a guard ring volt-current characteristics is investigated. The implantant treatment carried out after removal of a film SiO2 or boron doping by implantation, or mesa-etching. It is shown, that the best reverse volt-current characteristics corresponds to the case of treatment by nitrogen ions after p-areas surface doping.