No. 1 | Founded in 1994 | Moscow 2004 |
Development of electron gates with diminished mass-dimensional parameters
V. I. Perevodchikov, V. N. Shapenko, P. M. Stalkov, A. S. Murashov
The All-Russian Electrotechnical Institute, Moscow, Russia
For a number of years the All-Russian Electrotechnical Institute carries out development of electron gates — powerful vacuum valves based on a principle of inhibiting action of electron beams on the anode. Shown is the tendency of betterment for present electron gates and advanced designs.