APPLIED PHYSICS

THE SCIENTIFIC AND TECHNICAL JOURNAL


No. 1 Founded in 1994 Moscow 2004


Development of electron gates with diminished mass-dimensional parameters

V. I. Perevodchikov, V. N. Shapenko, P. M. Stalkov, A. S. Murashov
The All-Russian Electrotechnical Institute, Moscow, Russia

   For a number of years the All-Russian Electrotechnical Institute carries out development of electron gates — powerful vacuum valves based on a principle of inhibiting action of electron beams on the anode. Shown is the tendency of betterment for present electron gates and advanced designs.

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