APPLIED PHYSICS

THE SCIENTIFIC AND TECHNICAL JOURNAL


No. 1 Founded in 1994 Moscow 2004


Some possibilities of the use of confluence analysis for an interval parameter estimation of semiconductors in a cathodoluminescent microscopa

Yu. E. Gagarin, M. A. Stepovich
Kaluga Branch of Bauman Moscow State Technical University, Kaluga, Russia

   The methods of mathematical modeling have been applied to study possibilities of using confluence analysis for interval estimation of diffusion lengths of minority charge carriers in semiconductors. Confluence analysis has been realized for directly zoned semiconductors at different measurands errors of electron beam energies characteristic of real experiment.

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