| Ermilov V.G. About unelastic scattering in p-meson with nucleon interaction | 5 | |
| Lepehin N.М., Priseko Y.S., Filippov V.G. High-speed impulse modulation radiation of lasers on self-limited transitions of atoms of chemical devices | 8 | |
| Kozlov G.V., Burya A.I., Dolbin I.V. An influence of rotating electromagnetic filled on structure of carbon plastics on the basis of phenylone | 14 | |
| Karnacov V.A., Eghova A.V., Marchuc S.D., Cherbachenco L.A. Polarization process in heterogeneous structure | 19 | |
| Karpenko S.V. Structural phase transition in ionic crystals on extremely condition of high pressures | 22 |
| Malinin A.N., Shuaibov A.K., Shimon L.L., Hrabova I.A., Polyak A.V. New high-effectual electro-discharge lamps of visible and ultraviolet spectrum range | 27 | |
| Alferov D.A., Evsin D.V., Londer Yu.I. Disturbance of the stability of the electric arc under contact openig in a vacuum gap with a transverse magnetic field | 29 | |
| Aleksandrov A.F., Bugrov G.E., Vavilin K.V., Kerimova I.F., Kralkina E.A., Pavlov V.B., Plaksin V.Yu., Rukhadze A.A., Savinov V.P. Examination of an inductive high-frequency discharge as the self-consistent system. Part III Examination of influence of a capacitive component on plasma parameters in an inductive high-frequency discharge of low pressure | 36 |
| Bondar Yu.F., Kuzmin G.P., Mkheidze G.P., Ulyanov D.K., Arlantrev S.V. Method of large gas volume pumping | 43 |
| Sokolovsky B.S., Pysarevsky V.K., Vlasov A.P., Il’chuk G.A. Peculiarities of graded-gap photodiodes with nonmonotonic coordinate profile of the band gap | 51 | |
| Bogoboyashchiy V.V., Gerasymenko S.A., Yemetz V.V., Izhnin I.I. Modeling of native defects diffusion in heterogeneous Hg1-xCd<>sub>xTe crystals | 56 | |
| Dobrovolskiy Yu.G., Fotiy V.D. Research of influencing of the geometrically structured electric and magnetic fields on the parameters of silicon photodiodes | 61 | |
| Gaziyev F.N., Nasibov I.A., Ibragimov T.I., Huseynov E.K. HgCdTe based PEM detector for middle range of IR-spectrum | 64 | |
| Boltar K.O., Iakovleva N.I. Diffusion length in p-type HgCdTe epitaxial layers determination | 69 | |
| Aliyev A.A., Husseynov E.K., Mamedov A.K. Epitaxial SPRITE-photodetector | 72 | |
| Drapak S.I., Kovalyuk Z.D. Electrical properties and photosensitivity of the isotopic n-In2Se3 – n-InSe heterocontact | 76 | |
| Voitsekhovskiy A.V., Kokhanenko A.P., Nesmelov S.N., Lyapunov S.I., Yurryyevv V.A. Photoelectric and noise properties of GexSi1-x/Si heterostructures | 82 | |
| Salaev E.Yu., Nazarov A.M., Gadjieva S.I. Epitaxial photosensitive Pb1-xSnxSe(In) / PbSe1-xSx heterojunctions obtained in the ultrahign vacuum | 86 | |
| Zhukov A.G., Bazhinov A.N., Rjabov V.N., Vorovich E.B. Bolometer infrared sensors from Titanium- based material | 89 | |
| Chistokhin I.B., Demjanenko M.A. Determination of thermal parameters of microbolometers from electrical measurements | 91 | |
| Pravilshikov P.A. Noether “physical” theorem in photonics and computer science. Part II | 95 |
| Dermenji P.G., Loktaev Yu.M., Stavtsev A.V., Chernikov A.A. Duration of diodes
high reverse conduction stage at arbitrary law of forward current fall
| | 110 | Zhukov A.G., Mazeev V.A. Scanning IR- detector of bolometric array
| | 113 | Sviridov A.N. Calculation of utmost parameters of reception devices with the CO2 –quantum
amplifiers, intended for laser locators and active systems of vision.
| | 116 | Kostjukov E.V., Pospelova M.A., Rusak T.F., Trounov S.V.,
Oblygina T.A., Nikitina G.I.
Internal getter forming for modern charge-coupled devices
| | 124 | Almazov V.A.,Burtsev E.F.
Forming the powerful high-voltage current pulses of the short-ware
radio-frequency range |
| 129 | Glazov A.A., Karamysheva G.A., Lisenkova O.E.
High frequency acceleration system of the CUSTOMS cyclotron
| | 133 | |
Contents of
the journal down to 1994