APPLIED PHYSICS

Current transport mechanisms of photodiodes for the spectral range 8—12 µm
based on MBE-grown heteroepitaxial HgCdTe layers

J. V. Gumenjuk-Sichevska, V. V. Zabudsky, I. А. Lysiuk, F. F. Sizov
Institute of Semiconductor Physics, Kyiv, Ukraine

V. V. Vasiliev, V. S. Varavin, S. A. Dvoretsky, N. N. Mikhailov, Yu. G. Sidorov
Institute of Semiconductor Physics, Novosibirsk, Russia

   Charge transport mechanisms of n⁺-n^--p and n⁺-p photodiodes, obtained by boron ion doping of MBE-grown heteroepitaxial HgCdT layers have been studied. Results of model calculations performed within the balance equations scheme show that the dark current of n⁺-n^--p diodes is limited by the diffusion current in the junction and by the current through a midgap donor-type trap level with the energy E_t = 0.7 E_g .

PACS: 72.80.Ey; 73.61.Ga

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