APPLIED PHYSICS

Photosensitive properties of In/ZnTe/CdTe/HgCdTe structures

A. A. Guzev, V. S. Varavin, S. A. Dvoretsky, A. P. Kovchavtsev, G. L. Kuryshev, I. I. Lee, Z. V. Panova, Yu. G. Sidorov, M. V. Yakushev
A. V. Rzhanov Institute of Semiconductor Physics Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia

   The applications of HgCdTe MOS structures as photosensitive elements in the spectral range 3—5 µm is known. However, for fabrication a high-quality gate dielectric (silicon dioxide and nitride), it necessary to carry out the growth process at substrate heating above 180 °C, which deteriorates drastically the properties of semiconductor layers. It seems promising to use wide-gap II—VI semiconductor films which growned on the surface of the absorbing layer instead of the gate dielectric immediately after growing the HgCdTe working layer.

PACS: 73.40.QV

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