APPLIED PHYSICS

THE SCIENTIFIC AND TECHNICAL JOURNAL


No. 2 Founded in 1994 Moscow 2009


Semiconductor photosensitive structures with cubic zirconia as passivating protective overcoat

A. N. Buzinin, E. E. Lomonova
A. M. Prokhorov Institute of General Physics, Russian Academy of Sciences, Moscow, Russia

T. N. Grishina, L. A. Kosuhina, M. S. Sidorov, M. A. Trishenkov, A. E. Troshkov, I. V. Chinareva, S. N. Yakunin
Orion Research-and-Production Association, Moscow, Russia

   Within the limits of use the program of cubic zirconia in photoelectronics samples multielement germanium photo diodes with a Gray code have been made. In addition the protective and stabilising covering has been put on device surfaces — a layer of zirconium dioxide — ZrO2. Traditionally used low-temperature oxide SiO2 has certain disadvantage which managed to be eliminated thanks to a new stabilising covering. Comparison germanium devices with traditional oxide SiO2 and with new oxide ZrO2 has shown, that use of the last leads to essential advantages.

PACS: 85.30.-z

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