APPLIED PHYSICSTHE SCIENTIFIC AND TECHNICAL JOURNAL
Semiconductor photosensitive structures with cubic zirconia as passivating protective overcoat A. N. Buzinin, E. E. Lomonova
T. N. Grishina, L. A. Kosuhina, M. S. Sidorov, M. A. Trishenkov, A. E. Troshkov,
I. V. Chinareva, S. N. Yakunin
Within the limits of use the program of cubic zirconia in photoelectronics samples multielement germanium photo
diodes with a Gray code have been made. In addition the protective and stabilising covering has been put on
device surfaces — a layer of zirconium dioxide — ZrO2. Traditionally used low-temperature oxide SiO2
has certain disadvantage which managed to be eliminated thanks to a new stabilising covering. Comparison germanium
devices with traditional oxide SiO2 and with new oxide ZrO2 has shown, that use of the last
leads to essential advantages.
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