APPLIED PHYSICSTHE SCIENTIFIC AND TECHNICAL JOURNAL
The technological operation processes for fabrication of monolithic integrated IR detectors M. V. Yakushev, V. V. Vasiliev, S. A. Dvoretsky, T. I. Zahariyash, A. I. Kozlov,
Yu. G. Sidorov, B. I. Fomin, A. L. Aseev
A. V. Vinogradov
E. V. Degtyarev
We discuss the separates technology elements of fabricating of monolithic integrated HgCdTe infrared detectors. The
following processes were investigated: 1 — ROIC and FPA models on (013)Si; 2 — the stability of ROIC to thermal
annealing in vaccum; 3 — the development of low temperature thermal annealing of surface Si(310) substrate before
epitaxial growth; 4 — the selective CdTe and HgCdTe growth onto Si(310) surface in SiO2 windows of different
sizes; 5 — the development of mesa technology and In contacts to the top of mesa. The results show the possibility
to development the whole technology of fabricating monolithic integrated focal plane arrays on the basis of
photo-sensitive diodes grown in windows of ROIC.
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