(Applied Physics)

The Scientific and Technical Journal

2014, No. 4 Founded in 1994. Moscow


R. I. Golyatina and S. A. Maiorov Calculation of the characteristics electron transport in a mixture of helium and xenon  5
A. M. Anpilov, E. M. Barkhudarov, I. A. Kossyi, G. S. Luk’yanchikov, M. A. Misakyan, and I. V. Moryakov Thin film of nano-dimensional carbon deposition on the metallic samples as a multipactor prevention method   11
A. N. Morozov and A. V. Skripkin Diffusion of ions in the electrolyte under the influence of random current   16

L. M. Vasilyak, S. P. Vetchinin, V. N. Panov, V. Ya. Pecherkin, and E. E. Son Electric breakdown under the spread of pulsed current in a sand   20
S. E. Andreev and D. K. Ulyanov Method of radiation spectrum control for plasma relativistic microwave oscillator in repetitively-rated regime   26
N. N. Bogachev, I. L. Bogdankevich, and N. G. Gusein-zade Моделирование режимов работы плазменной антенны   30
V. O. German, A. P. Glinov, A. P. Golovin, and P. V. Kozlov About influence of an exterior magnetic field on stability of an electric arc   35
A. M. Borovskoi Simulation of gas flow in the cylindrical channels of high-voltage AC plasma torches subject to heating   40

K. O. Boltar, P. V. Vlasov, V. V. Eroshenkov, and A. A. Lopuhin Research of photodiodes with a leakage current in the InSb FPA   45
M. V. Sednev, K. O. Boltar, Y. P. Sharonov, and A. A. Lopukhin Effects of ion-beam etching at formation of mesa-structures with the submicron sizes   51
A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, V. V. Vasil`ev, V. S. Varavin, S. A. Dvoretskii, N. N. Mikhailov, V. D. Kuzmin, V. G. Remesnik, and Yu. G. Sidorov The investigation of admittance of MIS-structures based on graded-gap MBE n-HgCdTe (x = 0.22—0.23 and 0.31—0.32) in wide temperature range   56
A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, V. V. Vasil`ev , V. S. Varavin, S. A. Dvoretskii, N. N. Mikhailov, V. D. Kuzmin, V. G. Remesnik, and Yu. G. Sidorov The peculiarities of admittance of MIS structures based on graded-gap MBE p-HgCdTe (x = 0.22—0.23)   62
S. S. Demidov and E. A. Klimanov nfluence of parameters of a semiconductor-dielectric border on the current of a guard ring for silicon photodiodes   68
S. S. Demidov, E. A. Klimanov, and M. A. Nuri The coordinate silicon photodiode with improved parameters   73
A. S. Kashuba, C. V. Golovin, K. O. Boltar, E. V. Permikina, and A. S. Atrashkov Investigation of influence the heat processing time on electrophysical characteristics of CdхHg1-хTe multilayered structures   76
I. D. Burlakov, I. А. Denisov, A. L. Sizov, А. А. Silina, and N. А. Smirnova The surface roughness investigation of CdZnTe substrates by different measuring methods of nanometer accuracy   80
B. A. Kostiuk, V. S. Varavin, I. O. Parm, V. G. Remesnik, and G. Y. Sidorov Influence of plasma etching and following storage on the CdHgTe electrical properties   85
D. S. Andreev, T. N. Grishina, T. N. Mishchenkova, M. A. Trishenkov, and I. V. Chinareva Forming of the general contact in a mesaplanar FPA on basis of the InGaAs/InP heteroepitaxial structures   90
O. S. Komkov, D. D. Firsov, E. A. Kovalishina and A. S. Petrov Spectral absorption characteristics in epitaxial structures based on InAs at temperatures of 80 K and 300 K   93

B. V. Melkoumian Laser accelerometer on base of the autonomous resonator sensor   97


Rules for authors   102

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