GENERAL PHYSICS
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| R. I. Golyatina and S. A. Maiorov
Calculation of the characteristics electron transport in a mixture of helium and xenon
| | 5 |
| A. M. Anpilov, E. M. Barkhudarov, I. A. Kossyi, G. S. Luk’yanchikov, M. A. Misakyan, and I. V. Moryakov
Thin film of nano-dimensional carbon deposition on the metallic samples as a multipactor prevention method
| | 11 |
| A. N. Morozov and A. V. Skripkin
Diffusion of ions in the electrolyte under the influence of random current
| | 16 |
PLASMA PHYSICS AND PLASMA METHODS
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| L. M. Vasilyak, S. P. Vetchinin, V. N. Panov, V. Ya. Pecherkin, and E. E. Son
Electric breakdown under the spread of pulsed current in a sand
| | 20 |
| S. E. Andreev and D. K. Ulyanov
Method of radiation spectrum control for plasma relativistic microwave oscillator in repetitively-rated regime
| | 26 |
| N. N. Bogachev, I. L. Bogdankevich, and N. G. Gusein-zade
Моделирование режимов работы плазменной антенны
| | 30 |
| V. O. German, A. P. Glinov, A. P. Golovin, and P. V. Kozlov
About influence of an exterior magnetic field on stability of an electric arc
| | 35 |
| A. M. Borovskoi
Simulation of gas flow in the cylindrical channels of high-voltage AC plasma torches subject to heating
| | 40 |
PHOTOELECTRONICS
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| K. O. Boltar, P. V. Vlasov, V. V. Eroshenkov, and A. A. Lopuhin
Research of photodiodes with a leakage current in the InSb FPA
| | 45 |
| M. V. Sednev, K. O. Boltar, Y. P. Sharonov, and A. A. Lopukhin
Effects of ion-beam etching at formation of mesa-structures with the submicron sizes
| | 51 |
| A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, V. V. Vasil`ev, V. S. Varavin, S. A. Dvoretskii,
N. N. Mikhailov, V. D. Kuzmin, V. G. Remesnik, and Yu. G. Sidorov
The investigation of admittance of MIS-structures based on graded-gap MBE n-HgCdTe (x = 0.22—0.23 and 0.31—0.32) in wide temperature range
| | 56 |
| A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, V. V. Vasil`ev , V. S. Varavin, S. A. Dvoretskii,
N. N. Mikhailov, V. D. Kuzmin, V. G. Remesnik, and Yu. G. Sidorov
The peculiarities of admittance of MIS structures based on graded-gap MBE p-HgCdTe (x = 0.22—0.23)
| | 62 |
| S. S. Demidov and E. A. Klimanov
nfluence of parameters of a semiconductor-dielectric border on the current of a guard ring for silicon photodiodes
| | 68 |
| S. S. Demidov, E. A. Klimanov, and M. A. Nuri
The coordinate silicon photodiode with improved parameters
| | 73 |
| A. S. Kashuba, C. V. Golovin, K. O. Boltar, E. V. Permikina, and A. S. Atrashkov
Investigation of influence the heat processing time on electrophysical characteristics of CdхHg1-хTe multilayered structures
| | 76 |
| I. D. Burlakov, I. А. Denisov, A. L. Sizov, А. А. Silina, and N. А. Smirnova
The surface roughness investigation of CdZnTe substrates by different measuring methods of nanometer accuracy
| | 80 |
| B. A. Kostiuk, V. S. Varavin, I. O. Parm, V. G. Remesnik, and G. Y. Sidorov
Influence of plasma etching and following storage on the CdHgTe electrical properties
| | 85 |
| D. S. Andreev, T. N. Grishina, T. N. Mishchenkova, M. A. Trishenkov, and I. V. Chinareva
Forming of the general contact in a mesaplanar FPA on basis of the InGaAs/InP heteroepitaxial structures
| | 90 |
| O. S. Komkov, D. D. Firsov, E. A. Kovalishina and A. S. Petrov
Spectral absorption characteristics in epitaxial structures based on InAs at temperatures of 80 K and 300 K
| | 93 |
PHYSICAL APPARATUS AND ITS ELEMENTS
|
| B. V. Melkoumian
Laser accelerometer on base of the autonomous resonator sensor
| | 97 |
INFORMATION
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Rules for authors
| | 102 |
Contents of another issues