(Applied Physics)

The Scientific and Technical Journal

2014, No. 6 Founded in 1994. Moscow


V. M. Kotov Acousto-optic modulation of multi-color radiation with the proportional changing of the light waves intensity  5
M. B. Grisheckin, I. À. Denisov, À. À. Silina, N. À. Smirnova, N. I. Shmatov, and À. G. Yakovenko Investigation of structural defects in CdZnTe crystals by the infrared and optical microscopy   9
A. V. Romanov, M. A. Stepovich, and M. N. Filippov Using the model for the generation of secondary fluorescence spectra of condensed matter   16
N. A. Mammadov, G. I. Garibov, Sh. Sh. Alekberov, and E. A. Rasulov Influence of various external factors on the water surface tension   20

V. V. Andreev Study of impact of dielectric barrier discharge on the silicon-containing film   24
V. I. Asiunin, S. G. Davydov, A. N. Dolgov, T. I. Kozlovskaya, A. A. Pshenichniy, and R. Kh. Yakubov Arc discharge plasma dynamic features in inhomogeneous magnetic field   29
S. G. Davydov, A. N. Dolgov, T. I. Kozlovskaya, V. O. Revazov, V. P. Seleznev, and R. Kh. Yakubov The commutation process of a vacuum electrical gap in laser plasma   32
V. A. Ivanov, M. E. Konyzhev, A. A. Dorofeyuk, T. I. Kamolova, L. I. Kuksenova, V. G. Lapteva, and I. A. Khrennikova Formation of a strong microrelief on the steel–45 surface by microplasma discharges   38

N. D. Il’inskaya, S. A. Karandashev, N. G. Karpukhina, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus’, and A. A. Usikova The 3x3 matrix based on p-InAsSbP/n-InAs single heterostructure diode   47
I. A. Nikiforov, A. V. Nikonov, K. O. Boltar, and N. I. Iakovleva emperature dependence of minority carriers diffusion length in MCT   52
A. A. Lopukhin, V. E. Stepanyuk, I. I. Taubkin, and V. V. Fadeev Research of infrared light annealing influence on properties the InSb FPA’s structures   56
E. D. Korotaev, N. I. Iakovleva, A. E. Mirifianchenko, and A. V. Lialikov Main features of InGaAs/InP heterostructures intended for SWIR highspeed operation applications   60
A. A. Lopuhin Influence of the photosensitive layer thickness on InSb FPA properties   66
A. L. Sizov, A. E. Mirifianchenko, A. V. Lialikov, and N. I. Iakovleva Ñrystallographic analysis of the CdHgTe heteroepitaxial structures   70
A. Sh. Abdinov, N. Ì. Mehtiyev, R. F. Babayeva, and R. M. Rzayev Multifunctional photodetectors based on the n-InSe crystals   76

V. V. Aleksandrov, Y. S. Bychkouski, B. N. Drazhnikov, K. V. Kozlov, I. S. Kondyushin, and A. V. Matveev Universal equipment for measuring the electrical parameters of different electronic devices   81
A. D. Deomidov, M. E. Kononov, A. V. Polesskiy, N. A. Semenchenko, K. A. Khamidullin, and S. V. Dobrunov Test equipment for spectral response measurement of ultraviolet focal plane arrays   87
D. L. Baliev, E. A. Bedareva, A. D. Deomidov, A. V. Polesskiy, A. V. Sidorin, K. A. Khamidullin, A. D. Yudovskaya, and G. M. Tsygankova The automatic test-bench for measurement of the FPA characteristics based on InGaAs   93

Memory of Academician Yu. K. Pojela   99

Rules for authors»   100
Subscription   102

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