GENERAL PHYSICS
|
E. V. Seregina, M. A. Stepovich, A. M. Makarenkov, M. N. Filippov, and E. V. Platoshin
About the possibility of using the trigonometric expressions in the form of recursive functions for solving the diffusion equation with discontinuous
coefficients | | 5 |
S. V. Vinogradov, M. A. Kononov, and V. M. Kononov
Atomic-force microscopy of silver iodide nanocrystals under surface optical sensitization
| | 11 |
D. V. Manukovskaya, N. V. Sidorov, М. N. Palatnikov, and А. V. Syuy
Use of the fractal analysis for research of photoinduced light scattering pictures in lithium niobate crystals
| | 14 |
V. I. Krylov and V. V. Khomyakov
About bremsstrahlung of electrons passing through the multilayer structure of Coulomb centers and accelerated by a small homogeneous electric field
| | 18 |
PLASMA PHYSICS AND PLASMA METHODS
|
S. A. Maiorov, R. I. Golyatina, S. K. Kodanova, T. S. Ramazanov, and N. Kh. Bastykova
Properties of plasma–dust structures in the He–Ar RF discharge
| | 24 |
Yu. A. Lebedev, G. V. Krashevskaya, and M. A. Gogoleva
Spatial distribution of the electron component parameters in nitrogen plasma of a microwave electrode discharge at reduced pressure
| | 30 |
ELECTRON, ION, AND LASER BEAMS
|
A. S. Klimov, V. A. Burdovitsin, A. A. Grishkov, E. M. Oks, A. A. Zenin, and Yu. G. Yushkov
Ribbon electron beam formation by a forevacuum plasma electron source
| | 35 |
A. V. Balovnev, I. V. Vizgalov, and G. H. Salahutdinov
Abnormal electron-electron emission diagnostics in autooscillation regime of a beam plasma discharge by the filter
method and ter-moluminescent detectors
| | 40 |
PHOTOELECTRONICS
|
A. V. Vishnyakov, V. A. Stuchinsky, D. V. Brunev, A. V. Zverev, and S. A. Dvoretsky
Two-dimensional diffusion model as applied to the analysis of the diffusion process of charge carriers in the photosensitive film
of HgCdTe IR FPA detectors
| | 44 |
V. M. Akimov, K. O. Boltar, L. A. Vasileva, N. A. Demidov, N. A. Irodov, and E. A. Klimanov
Modified topology of indium microcontacts
| | 51 |
D. S. Andreev, A. K. Budtolaev, O. V. Ogneva, M. A. Trishenkov, and I. V. Chinareva
Passivation and protection of a surface of photodiodes based on In1-xGaxAs1-yPy/InP by the silicon-nitride film
| | 56 |
P. M. Borovkov, L. N. Kazarin, N. V. Kravchenko, A. V. Potapov, and M. A. Trishenkov
Features of a circuit technology for pulse threshold photodetectors with rapid sensitivity recovery after the influence of an overloading pulse
| | 61 |
V. I. Demidov, A. A. Kolesova, M. E. Kononov, A. V. Lobachyov, A. V. Polesskiy, N. A. Semenchenko, and K. A. Khamidullin
Research of influence of the photodetectors’ dynamic range on the measurement accuracy of the optical system’s point spread function
| | 66 |
N. N. Oganesyan, A. V. Samvelov, D. A. Sysoev, and D. V. Minaev
The study of the dependence of main characteristics of matrix photodetectors on cryoagent pressure of microcryogenic system
| | 72 |
K. O. Boltar, A. S. Kashuba, M. V. Sednev, and Yu. P. Sharonov
Investigation of the relaxation processes in heteroepitaxial HgCdTe structures
| | 76 |
V. S. Varganova, N. V. Kravchenko, V. M. Patryn, M. A. Trishenkov, P. E. Khakuashev, and I. V. Chinareva
Features of spectral characteristics of ultraviolet GaP photodiodes using Schottky barrier
| | 80 |
A. V. Nikonov, N. M. Kulyahtina, K. O. Boltar, and N. I. Iakovleva
Refractive index of InP and InGaAsP epitaxial layers
| | 83 |
N. I. Iakovleva, K. O. Boltar, М. V. Sednev, A. A. Lopuxin, and E .D. Korotaev
320х256 ADP FPA based on A3B5 heterostructures with InGaAs absorber layer and InAlAs barrier layer
| | 87 |
PHYSICAL APPARATUS AND ITS ELEMENTS
|
E. R. Badertinov, I. G. Denisov, and A. V. Kozlov
Design features of a television channel in the infrared-visible optical systems
| | 92 |
B. V. Melkoumian
Using the resonator sensor of acceleration
| | 96 |
INFORMATION
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Resolution of All-Russian Forum on Technological Leadership of Russia - TECHNODOCTRINA™-2014
| | 101 |
Summary list of articles published in 2014
| | 103 |
Rules for authors
| | 108 |
Subscription
| | 110 |