GENERAL PHYSICS
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| A. V. Voitsekhovskii and D. I. Gorn
Laser generation in the structures with CdHgTe quantum wells
| | 5 |
| A. G. Rokakh, M. I. Shishkin, S. B. Venig, M. D. Matasov, and V. S. Atkin
Analogies between exoelectroniс photoemission and secondary ionic photoeffect in semiconductors
| | 11 |
| M. V. Logunov, V. A. Neverov, and B. F. Mamin
Investigation of structural inhomogeneity of silicon carbide by the low-angle X-ray scattering method
| | 15 |
PLASMA PHYSICS AND PLASMA METHODS
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| P. S. Plyaka, S. H. Alikhadjiev, and G. N. Tolmachev
Investigation of dust particles, forming by complex oxide sputtering in oxygen radiofrequency discharge
| | 19 |
ELECTRON, ION, AND LASER BEAMS
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| V. V. Kulish, A. V. Lysenko, G. A. Oleksiienko, V. V. Koval, and M. Yu. Rombovsky
Plasma-beam superheterodyne FELs with helical electron beams
| | 24 |
| V. I. Krylov and V. V. Khomyakov
Bremsstrahlung of electrons passing through the multilayer structure of Coulomb centers and accelerated by a homogeneous electric field
| | 29 |
| A. Y. Cheban, N. P. Khrunina, and N. A. Leonenko
Improvement of technology of continuous extraction of rocks with the use of laser radiation
| | 34 |
PHOTOELECTRONICS
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| V. A. Kholodnov, I. D. Burlakov, and A. A. Drugova
Analytical approach to the selection of the optimal structure of avalanche heterophotodiodes on the basis of direct bandgap semiconductors
| | 38 |
| A. V. Voytsekhovskiy, A. P. Kokhanenko, and K. A. Lozovoy
Optimization of growth conditions for improvement of parameters of photoreceivers and solar cells with quantum dots
| | 45 |
| V. M. Akimov, D. S. Andreev, S. S. Demidov, N. A. Irodov, and E. A. Klimanov
The current-voltage characteristics of photodiodes of the planar type FPA based on p-InP/InGaAs/n-InP structure
| | 50 |
| D. L. Baliev, P. S. Lazarev, and K. O. Boltar
Research of main photoelectric characteristics of the 320x256 InGaAs FPA’s
| | 54 |
| A. G. Rokakh, M. I. Shishkin, A. A. Skaptsov, and V. A. Puzynya
On the possibility of the plasma resonance in CdS-PbS films in the middle infrared region
| | 58 |
| P. S. Skrebneva, I. D. Burlakov, and N. I. Iakovleva
Investigation of the heteroepitaxial CdHgTe structures by spectroscopic ellipsometry
| | 61 |
| A. S. Kashuba, E. V. Permikina, and S. V. Golovin
Investigation of the surfaces of CdхHg1-хТе epitaxial heterostructures after etching
| | 67 |
| M. B. Grishechkin, I. A. Denisov, A. A. Silina, N. A. Smirnova, and N. I. Shmatov
nvestigation of growing conditions of
Cd1-xZnxTe (х < 0.04) single crystals by the vertical directed сrystallization (Bridgman) method
| | 72 |
| R. S. Madatov, A. C. Alekbarov, O. M. Hasanov, and R. B. Bayramov
Influence of the Sm atom impurity and gamma irradiation on photoconductivity spectrum of layered GeS monocrystals
| | 76 |
PHYSICAL APPARATUS AND ITS ELEMENTS
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| E. A. Bedareva, L. I. Gorelik, A. A. Kolesova, A. V. Polesskiy, N. A. Semenchenko, A. I. Shketov
High-aperture dual-band infrared lens
| | 80 |
| D. T. Tiranov, A. A. Guseva, and V. L. Philippov
Modeling objects brightness fields against the background of the broken cloud cover of atmosphere at observing from a lower hemisphere
| | 85 |
INFORMATION
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Rules for authors
| | 88 |
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Three Volumes on Photoelectronics
| | 90 |
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Subscription
| | 92 |
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